Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA2

RS 제품 번호:: 258-3870
제조사 부품 번호:: IPD90P04P4L04ATMA2
제조업체:: Infineon

Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA2

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Subtotal (1 reel of 2500 units)*

₩4,025,000.00

2,500 개 단위 배송 준비 완료

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수량	한팩당	릴당*
2500 - 2500	₩1,610.00	₩4,023,500.00
5000 - 5000	₩1,578.00	₩3,943,000.00
7500 +	₩1,530.00	₩3,824,500.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 258-3870
제조사 부품 번호:: IPD90P04P4L04ATMA2
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-90A
	Maximum Drain Source Voltage Vds	-40V
	Package Type	TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.30mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	5V
	Typical Gate Charge Qg @ Vgs	135nC
	Maximum Power Dissipation Pd	125W
	Maximum Operating Temperature	175°C
	Standards/Approvals	DIN IEC 68-1, RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -90A
	Maximum Drain Source Voltage Vds -40V
	Package Type TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.30mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 5V
	Typical Gate Charge Qg @ Vgs 135nC
	Maximum Power Dissipation Pd 125W
	Maximum Operating Temperature 175°C
	Standards/Approvals DIN IEC 68-1, RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD90P04P4L04ATMA2

Infineon IPD Series MOSFET, -40V Maximum Drain-Source Voltage, 125W Maximum Power Dissipation - IPD90P04P4L04ATMA2

This MOSFET is a P‑channel enhancement device designed for surface‑mount power switching and control in demanding electronic systems. It operates across a broad temperature span and is suited to high‑current applications where low conduction loss and defined gate‑drive thresholds are required. The device meets recognised environmental and automotive stress standards for use in engineered assemblies.

Features and Benefits:

• Low on‑resistance reduces conduction losses for efficiency gains
• High continuous current capability supports heavy‑load switching
• 135 nC typical gate charge enables controlled switching behaviour
• 125W power dissipation permits sustained power handling
• Wide operating temperature range allows extended environmental tolerance

Applications

• Suitable for high‑current power distribution modules in vehicles
• Ideal for thermally challenging industrial power converters
• Used with gate‑drive circuits requiring 5V compatibility
• Can be used for surface‑mount board‑level power switching
• Suitable for RoHS‑compliant automotive electronic assemblies

What gate‑drive voltage range is compatible with this device?

It accepts a maximum gate‑source voltage of 5V, which aligns with common logic‑level drivers.

How does the device behave in extreme temperatures?

It is specified to operate from -55°C up to 175°C, enabling use in wide‑temperature environments.

What package and mounting method are provided for assembly?

The component is supplied in a TO‑252 package configured for surface mounting on circuit boards.

What approvals and environmental standards does it meet?

It conforms to DIN IEC 68‑1 and RoHS requirements and satisfies automotive AEC‑Q101 qualification.

What electrical limits should designers observe for safe operation?

The device is rated for -40V drain-source voltage, -90A continuous drain current, and a maximum gate charge of 135 nC.