Infineon OptiMOS Type P-Channel MOSFET & Diode, 90 A, 30 V Enhancement, 3-Pin TO-252
- RS 제품 번호:
- 220-7415
- 제조사 부품 번호:
- IPD90P03P4L04ATMA2
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 2500 units)*
₩3,642,500.00
현재 액세스할 수 없는 재고 정보
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 2500 | ₩1,457.00 | ₩3,640,620.00 |
| 5000 - 7500 | ₩1,426.92 | ₩3,567,770.00 |
| 10000 + | ₩1,383.68 | ₩3,460,610.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 220-7415
- 제조사 부품 번호:
- IPD90P03P4L04ATMA2
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 137W | |
| Forward Voltage Vf | -1.3V | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Height | 2.41mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 137W | ||
Forward Voltage Vf -1.3V | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Height 2.41mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a wide portfolio of P-channel automotive power MOSFET in DPAK, D2PAK, TO220, TO262 and SO8 package with the technology of OptiMOS -P2 and Gen5.
P-channel - Logic Level - Enhancement mode
No charge pump required for high side drive.
Simple interface drive circuit
World's lowest RDSon at 40V
Highest current capability
Lowest switching and conduction power losses for highest thermal efficiency
관련된 링크들
- Infineon OptiMOS Type P-Channel MOSFET & Diode, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA2
- Infineon OptiMOS P Type P-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS P Type P-Channel Power Transistor, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA1
- Infineon OptiMOS P Type P-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA1
- Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET, 90 A, 30 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252
