Infineon OptiMOS P Type P-Channel Power Transistor, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA1
- RS 제품 번호:
- 753-3033
- 제조사 부품 번호:
- IPD90P03P4L04ATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩16,074.00
마지막 RS 재고
- 최종적인 10 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 620 | ₩3,214.80 | ₩16,074.00 |
| 625 - 1245 | ₩3,139.60 | ₩15,698.00 |
| 1250 + | ₩3,086.96 | ₩15,434.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 753-3033
- 제조사 부품 번호:
- IPD90P03P4L04ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | OptiMOS P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Maximum Power Dissipation Pd | 137W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Power Transistor | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series OptiMOS P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Maximum Power Dissipation Pd 137W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 6.5mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q | ||
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
관련된 링크들
- Infineon OptiMOS Type P-Channel MOSFET & Diode, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA2
- Infineon IPD Type P-Channel MOSFET, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P404ATMA2
- Infineon OptiMOS P Type P-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA1
- Infineon OptiMOS P Type P-Channel Power Transistor, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA1
- Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252 IPD90P04P405ATMA2
- Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA2
- Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252 IPD90N06S4L03ATMA2
- Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90N03S4L02ATMA1