Infineon HEXFET N-Channel MOSFET, 24 A, 200 V Enhancement TO-263 IRFS4620TRLPBF

RS 제품 번호:: 257-9436
제조사 부품 번호:: IRFS4620TRLPBF
제조업체:: Infineon

Infineon HEXFET N-Channel MOSFET, 24 A, 200 V Enhancement TO-263 IRFS4620TRLPBF

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Subtotal (1 pack of 5 units)*

₩19,820.00

추가로 2026년 10월 26일 부터 330 개 단위 배송

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수량	한팩당	한팩당*
5 - 20	₩3,964.00	₩19,820.00
25 - 45	₩3,548.00	₩17,740.00
50 - 95	₩3,476.00	₩17,380.00
100 - 245	₩2,848.00	₩14,240.00
250 +	₩2,796.00	₩13,980.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 257-9436
제조사 부품 번호:: IRFS4620TRLPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Through Hole
	Maximum Drain Source Resistance Rds	77.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	144W
	Typical Gate Charge Qg @ Vgs	25nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-263
	Series HEXFET
	Mount Type Through Hole
	Maximum Drain Source Resistance Rds 77.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 144W
	Typical Gate Charge Qg @ Vgs 25nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFS4620TRLPBF

Infineon HEXFET Series MOSFET, 200V Maximum Drain-Source Voltage, 24A Maximum Continuous Drain Current - IRFS4620TRLPBF

This MOSFET is an N-channel enhancement-mode power transistor designed for high-voltage switching and power-conversion tasks. It is supplied in a TO-263 package suited to board-mounted power assemblies and operates across an extended temperature span for demanding environments. The device incorporates an intrinsic body diode with a specified forward voltage and is RoHS-compliant.

Features and Benefits:

• 200V rating enables high-voltage switching applications
• 24A continuous current supports substantial load handling
• 77.5mΩ RDS(on) reduces conduction losses during operation
• 144W power dissipation allows elevated thermal loading
• 25 nC typical gate charge yields predictable drive requirements

Applications

• Suitable for high-voltage DC-DC converter stages
• Ideal for switch-mode power-supply output switches
• Used with motor-drive controllers in power assemblies
• Can be used for load-switching in industrial electronics
• Appropriate for power management in non-automotive systems

What gate-drive considerations should I plan for?

Expect a typical total gate charge of 25 nC at VGS

choose a driver that can source and sink sufficient current to achieve the desired switching speed.

How does thermal capability affect PCB design?

With a maximum power dissipation of 144W, ensure adequate copper area or heatsinking and thermal vias to manage junction-to-ambient heat transfer.

What are the limits for control and signal voltages?

The gate may be driven up to 20V relative to source

gate-source excursions should not exceed this value.

What temperature range can it tolerate in operation?

The device is specified to operate from -55°C up to 175°C for wide-temperature applications.

What diode characteristic matters for reverse conduction?

The intrinsic diode presents a forward voltage of 1.3V which influences conduction losses during reverse-current events.