Infineon HEXFET Type N-Channel MOSFET, 246 A, 75 V Enhancement, 3-Pin TO-263
- RS 제품 번호:
- 168-6020
- 제조사 부품 번호:
- IRFS7730TRLPBF
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 800 units)*
₩1,926,624.00
일시적 품절
- 2026년 3월 27일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 800 - 800 | ₩2,408.28 | ₩1,926,323.20 |
| 1600 - 2400 | ₩2,359.40 | ₩1,887,820.80 |
| 3200 + | ₩2,312.40 | ₩1,850,070.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 168-6020
- 제조사 부품 번호:
- IRFS7730TRLPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 246A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 271nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 246A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 271nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness Ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
관련된 링크들
- Infineon HEXFET Type N-Channel MOSFET, 246 A, 75 V Enhancement, 3-Pin TO-263 IRFS7730TRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 269 A, 75 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 250 A, 40 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 173 A, 60 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 195 A, 150 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 61 A, 100 V Enhancement, 3-Pin TO-263
