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Infineon HEXFET N-Channel MOSFET, 24 A, 200 V Enhancement TO-263 IRFS4620TRLPBF

RS 제품 번호:: 257-9434
제조사 부품 번호:: IRFS4620TRLPBF
제조업체:: Infineon

Infineon HEXFET N-Channel MOSFET, 24 A, 200 V Enhancement TO-263 IRFS4620TRLPBF

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Subtotal (1 reel of 800 units)*

₩1,590,400.00

일시적 품절

2027년 11월 01일 부터 배송

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RS 제품 번호:: 257-9434
제조사 부품 번호:: IRFS4620TRLPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Through Hole
	Maximum Drain Source Resistance Rds	77.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	25nC
	Maximum Power Dissipation Pd	144W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-263
	Mount Type Through Hole
	Maximum Drain Source Resistance Rds 77.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 25nC
	Maximum Power Dissipation Pd 144W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFS4620TRLPBF

Infineon HEXFET Series MOSFET, 200V Maximum Drain-Source Voltage, 24A Maximum Continuous Drain Current - IRFS4620TRLPBF

This MOSFET is an N-channel enhancement-mode power transistor designed for high-voltage switching and power-conversion tasks. It is supplied in a TO-263 package suited to board-mounted power assemblies and operates across an extended temperature span for demanding environments. The device incorporates an intrinsic body diode with a specified forward voltage and is RoHS-compliant.

Features and Benefits:

• 200V rating enables high-voltage switching applications
• 24A continuous current supports substantial load handling
• 77.5mΩ RDS(on) reduces conduction losses during operation
• 144W power dissipation allows elevated thermal loading
• 25 nC typical gate charge yields predictable drive requirements

Applications

• Suitable for high-voltage DC-DC converter stages
• Ideal for switch-mode power-supply output switches
• Used with motor-drive controllers in power assemblies
• Can be used for load-switching in industrial electronics
• Appropriate for power management in non-automotive systems

What gate-drive considerations should I plan for?

Expect a typical total gate charge of 25 nC at VGS

choose a driver that can source and sink sufficient current to achieve the desired switching speed.

How does thermal capability affect PCB design?

With a maximum power dissipation of 144W, ensure adequate copper area or heatsinking and thermal vias to manage junction-to-ambient heat transfer.

What are the limits for control and signal voltages?

The gate may be driven up to 20V relative to source

gate-source excursions should not exceed this value.

What temperature range can it tolerate in operation?

The device is specified to operate from -55°C up to 175°C for wide-temperature applications.

What diode characteristic matters for reverse conduction?

The intrinsic diode presents a forward voltage of 1.3V which influences conduction losses during reverse-current events.