Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRFS4020TRLPBF
- RS 제품 번호:
- 130-1000
- Distrelec 제품 번호:
- 304-36-991
- 제조사 부품 번호:
- IRFS4020TRLPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩10,374.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 195 | ₩2,074.80 | ₩10,374.00 |
| 200 - 395 | ₩2,028.00 | ₩10,140.00 |
| 400 + | ₩1,992.90 | ₩9,964.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 130-1000
- Distrelec 제품 번호:
- 304-36-991
- 제조사 부품 번호:
- IRFS4020TRLPBF
- 제조업체:
- Infineon
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.65mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Operating Temperature 175°C | ||
Height 9.65mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 100W Maximum Power Dissipation - IRFS4020TRLPBF
This MOSFET is designed for optimised performance in Class-D audio amplifier applications. Advanced processing techniques yield low on-resistance while enhancing efficiency, total harmonic distortion (THD), and electromagnetic interference (EMI). It can function effectively at elevated temperatures, making it suitable for various environments.
Features & Benefits
• Designed for high-efficiency Class-D audio amplification
• Low Rds(on) improves overall efficiency
• Operating junction temperature up to 175°C ensures robustness
• Repetitive avalanche capability safeguards against voltage spikes
Applications
• Utilised in Class-D audio amplifiers for improved sound quality
• Ideal for high current power supply
• Suitable for consumer and professional audio equipment
• Employed in high-performance automotive audio systems
What is the maximum continuous drain current?
The device can handle a maximum continuous drain current of 18A at 25°C.
Can this device operate at high temperatures?
Yes, it is designed to function effectively at temperatures as high as 175°C.
What configurations can it be used in?
It is suitable for half-bridge configurations in audio amplifiers, delivering significant power outputs.
How does low gate charge impact performance?
The low gate charge enhances efficiency and reduces the turn-on time, thus improving overall amplifier performance.
Is it compatible with surface mount technology?
Yes, this device is packaged in a D2PAK form factor, which is Ideal for surface mount applications.
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