Infineon HEXFET Type N-Channel MOSFET, 43 A, 60 V TO-252 IRFR3806TRPBF
- RS Stock No.:
- 257-9409
- Mfr. Part No.:
- IRFR3806TRPBF
- Brand:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
₩7,275.60
재고있음
- 추가로 2026년 2월 09일 부터 3,555 개 단위 배송
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | ₩1,455.12 | ₩7,275.60 |
| 50 - 95 | ₩1,379.92 | ₩6,899.60 |
| 100 - 245 | ₩1,297.20 | ₩6,486.00 |
| 250 - 995 | ₩1,206.96 | ₩6,034.80 |
| 1000 + | ₩1,109.20 | ₩5,546.00 |
*price indicative
- RS Stock No.:
- 257-9409
- Mfr. Part No.:
- IRFR3806TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 15.8mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 71W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 15.8mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 71W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IRFR series is the 60V single n channel power mosfet in a DPAK package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount package
Silicon optimized for applications switching below 100 kHz
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