Infineon HEXFET N-Channel MOSFET, 35 A, 150 V Enhancement TO-220 IRFB5615PBF

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₩19,000.00

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5 - 5₩3,800.00₩19,000.00
10 - 20₩3,336.00₩16,680.00
25 - 45₩3,276.00₩16,380.00
50 - 70₩3,204.00₩16,020.00
75 +₩3,144.00₩15,720.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
257-9355
Distrelec 제품 번호:
304-40-527
제조사 부품 번호:
IRFB5615PBF
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

39mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

+175°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon HEXFET Series MOSFET, 150V Maximum Drain-Source Voltage, 35A Maximum Continuous Drain Current - IRFB5615PBF


This MOSFET is a through-hole power transistor designed for switching and power conversion in demanding environments. It operates as an enhancement-mode N-channel device in a TO-220 package, suitable for installations requiring a robust drain-source voltage rating and substantial continuous current handling. The component meets RoHS requirements and is rated for a wide thermal span suited to industrial conditions.

Features and Benefits:


• 150V drain-source rating enables high-voltage switching applications
• 35A continuous current supports high-current power supplies
• 39mΩ low Rds(on) minimises conduction losses during operation
• -55°C to +175°C operating range permits use across extreme temperatures
• 1.3V forward gate voltage reduces drive requirements for switching

Applications


• Suitable for motor-drive power stages
• Ideal for high-current switch-mode power supplies
• Used with discrete power-control modules in industrial systems
• Can be used for high-voltage DC switching tasks

What package type should I expect for PCB mounting?


It is supplied in a TO-220 through-hole package suitable for secure soldered mounting.

How does the channel type affect switching polarity?


The N-channel configuration requires positive gate drive relative to source for conduction.

Is this component intended for automotive qualification?


It is not specified to conform to automotive-grade standards.

What standard environmental restriction is adhered to?


The device complies with RoHS directives limiting certain hazardous substances.

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