Vishay Si2329DS Type P-Channel MOSFET, -6 A, -8 V, 3-Pin SOT-23 SI2329DS-T1-GE3

RS 제품 번호:: 256-7347
제조사 부품 번호:: SI2329DS-T1-GE3
제조업체:: Vishay

Vishay Si2329DS Type P-Channel MOSFET, -6 A, -8 V, 3-Pin SOT-23 SI2329DS-T1-GE3

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Subtotal (1 pack of 25 units)*

₩21,742.50

1,850 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
25 - 25	₩869.70	₩21,742.50
50 - 75	₩826.80	₩20,650.50
100 - 225	₩776.10	₩19,402.50
250 - 975	₩721.50	₩18,057.00
1000 +	₩663.00	₩16,594.50

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 256-7347
제조사 부품 번호:: SI2329DS-T1-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-6A
	Maximum Drain Source Voltage Vds	-8V
	Series	Si2329DS
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.12Ω
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	5V
	Typical Gate Charge Qg @ Vgs	19.3nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.5W
	Maximum Operating Temperature	150°C
	Height	1.12mm
	Width	1.4mm
	Standards/Approvals	IEC 61249-2-21, RoHS
	Length	3.04mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -6A
	Maximum Drain Source Voltage Vds -8V
	Series Si2329DS
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.12Ω
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 5V
	Typical Gate Charge Qg @ Vgs 19.3nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.5W
	Maximum Operating Temperature 150°C
	Height 1.12mm
	Width 1.4mm
	Standards/Approvals IEC 61249-2-21, RoHS
	Length 3.04mm
	Automotive Standard No

Datasheet - SI2329DS-T1-GE3

Vishay Si2329DS Series MOSFET, -8V Maximum Drain Source Voltage, 0.12Ω Maximum Drain Source Resistance - SI2329DS-T1-GE3

This p-channel MOSFET functions as a Compact, surface-mounted switching device for low-voltage electronics. It is intended for applications requiring efficient P-channel control in Compact layouts and operates within a negative drain-source voltage environment typical of P-type switches. The device is supplied in a three-lead SOT-23 package suitable for dense board assemblies.

Features and Benefits:

• Low on-resistance at 0.12Ω enabling reduced conduction losses
• Continuous drain current rated to 6A supporting moderate load currents
• Maximum drain-source voltage of -8V allowing low-voltage switching
• Gate tolerance up to 5V for straightforward gate-drive compatibility
• Typical gate charge 19.3nC delivering fast switching with lower drive energy
• Power dissipation 2.5W permitting sustained switching under load

Applications

• Suitable for high-side load switching in power rails
• Ideal for battery management and protection circuits
• Used with level-shifters in mixed-voltage control systems
• Can be used for polarity-reversal or reverse-current protection
• Suitable for Compact power distribution modules in automation equipment

What operating temperature range can I expect for reliable operation?

The component is specified to function between -55°C and 150°C, permitting use in cold-start and elevated-temperature environments.

How does the package choice influence thermal performance?

The SOT-23 surface-mount package and 2.5W dissipation rating require careful PCB thermal design and thermal vias to maintain junction temperature under continuous load.

What mechanical footprint considerations are relevant for dense assemblies?

With a minimal height of 1.12mm and small plan dimensions, the device permits tight component placement while retaining three-pin connection simplicity.

What standards or material requirements are met for regulatory-compliant builds?

The component conforms to RoHS and adheres to IEC 61249-2-21 material specifications for printed-circuit laminate compatibility.