Vishay TrenchFET Type P-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SI2399DS-T1-GE3
- RS 제품 번호:
- 180-7829
- 제조사 부품 번호:
- SI2399DS-T1-GE3
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 pack of 20 units)*
₩12,714.00
일시적 품절
- 2026년 5월 15일 부터 1,340 개 단위 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 20 - 740 | ₩635.70 | ₩12,714.00 |
| 760 - 1480 | ₩620.10 | ₩12,382.50 |
| 1500 + | ₩610.35 | ₩12,207.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-7829
- 제조사 부품 번호:
- SI2399DS-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.6W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.6W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 12V. It has drain-source resistance of 34mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 2.5W and continuous drain current of 6A. The minimum and a maximum driving voltage for this transistor are 2.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• DC/DC converters
• Load switch
• PA switch
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
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