제조사부품번호

Vishay Si2329DS Type P-Channel MOSFET, -6 A, -8 V, 3-Pin SOT-23 SI2329DS-T1-GE3

RS 제품 번호:: 256-7346
제조사 부품 번호:: SI2329DS-T1-GE3
제조업체:: Vishay

Vishay Si2329DS Type P-Channel MOSFET, -6 A, -8 V, 3-Pin SOT-23 SI2329DS-T1-GE3

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RS 제품 번호:: 256-7346
제조사 부품 번호:: SI2329DS-T1-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-6A
	Maximum Drain Source Voltage Vds	-8V
	Series	Si2329DS
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.12Ω
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	5V
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	19.3nC
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Width	1.4mm
	Standards/Approvals	IEC 61249-2-21, RoHS
	Height	1.12mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -6A
	Maximum Drain Source Voltage Vds -8V
	Series Si2329DS
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.12Ω
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs 5V
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 19.3nC
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Width 1.4mm
	Standards/Approvals IEC 61249-2-21, RoHS
	Height 1.12mm
	Automotive Standard No

Datasheet - SI2329DS-T1-GE3

Vishay Si2329DS Series MOSFET, 2.5W Maximum Power Dissipation, 0.12Ω Maximum Drain Source Resistance - SI2329DS-T1-GE3

This p-channel MOSFET is a compact surface-mount transistor designed for switching and power-management roles in electronic assemblies. It operates across a wide temperature span and is suitable for applications requiring low on-resistance, moderate current handling and standard gate-drive levels within small SOT-23 packages.

Features and Benefits:

• Low on-resistance Rds(on) 0.12 Ω enables reduced conduction losses
• Rated continuous drain current 6A supports higher load currents
• Maximum power dissipation 2.5W allows sustained switching duty
• Gate charge Qg 19.3 nC facilitates relatively fast switching performance
• Gate-source voltage rating 5V permits standard logic-level gate drives
• Operating range -55 °C to 150 °C ensures wide temperature tolerance

Applications

• Suitable for battery-protection circuits in portable devices
• Ideal for power-management in compact consumer electronics
• Used with load-switching in automotive-adjacent non‑certified systems
• Can be used for high-side switching in DC power rails
• Suitable for surface-mount designs requiring SOT-23 footprint

What mounting method is required for assembly?

It is a surface-mount device in an SOT-23 package, intended for reflow soldering onto PCBs.

Which polarity and voltage does the device handle on the drain-source?

The device is a P‑channel type specified for a maximum drain-source voltage of -8V when used within ratings.

How does thermal performance affect layout considerations?

With a maximum dissipation of 2.5 W, PCB copper area and thermal vias should be provided to spread heat and maintain junction temperature under heavy load.

Are there limitations on gate-drive amplitudes?

The maximum gate-source differential is 5V, so gate drivers must not exceed this voltage to avoid damage.