Infineon OptiMOS P Type P-Channel MOSFET, 310 mA, 20 V Enhancement, 3-Pin SC-70 BSS223PWH6327XTSA1

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RS 제품 번호:
165-5861
제조사 부품 번호:
BSS223PWH6327XTSA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
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브랜드

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

310mA

Maximum Drain Source Voltage Vds

20V

Package Type

SC-70

Series

OptiMOS P

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.1Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12 V

Forward Voltage Vf

-1V

Maximum Power Dissipation Pd

250mW

Typical Gate Charge Qg @ Vgs

0.5nC

Maximum Operating Temperature

150°C

Length

2mm

Standards/Approvals

No

Height

0.8mm

Width

1.25 mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

Infineon OptiMOS P Series MOSFET, 310 mA Maximum Continuous Drain Current, 250 mW Maximum Power Dissipation - BSS223PWH6327XTSA1


This MOSFET serves as a crucial element in electronic circuits, acting as a switch or amplifier in numerous applications. Its P-channel design and enhancement mode characteristics enable efficient current control in surface-mounted electronic systems. The component's high-temperature operation capability makes it suitable for automotive and industrial applications where performance in extreme conditions is essential.

Features & Benefits


• Enhances efficiency with low on-resistance of 1.2Ω

• Supports high-temperature operations up to 150°C

• Provides robust performance with a maximum voltage rating of 20V

• Suitable for high-speed switching with minimal delay times

• Complies with AEC-Q101 standards for automotive applications

• Delivers consistent operation with low gate charge characteristics

Applications


• Driving loads in automotive

• Utilised in battery management systems for electric vehicles

• Implemented in power management circuits for consumer electronics

• Employed in amplifiers for audio and electronic devices

• Applied in various automation systems requiring efficient switching

What is the maximum current the component can handle?


The maximum continuous drain current it can handle is 310mA at 25°C, ensuring dependable operation under specified conditions.

How is this component optimised for high-temperature environments?


It is designed to withstand operating temperatures up to +150°C, making it suitable for use in challenging applications.

What type of mounting does this transistor accommodate?


This component is intended for surface mount assembly, facilitating its integration into compact electronic systems.

Does it comply with any automotive standards?


Yes, it is qualified according to AEC-Q101, meeting stringent reliability standards for automotive applications.

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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