Infineon BSS N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-323 BSS138WH6327XTSA1

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₩3,960.00

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한팩당*
10 - 10₩396.00₩3,960.00
20 - 90₩356.00₩3,560.00
100 - 240₩322.00₩3,220.00
250 - 490₩286.00₩2,860.00
500 +₩260.00₩2,600.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
250-0542
제조사 부품 번호:
BSS138WH6327XTSA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

280mA

Maximum Drain Source Voltage Vds

60V

Series

BSS

Package Type

SOT-323

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6000mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

+150°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Infineon BSS Series MOSFET, 60V Maximum Drain-Source Voltage, 81W Maximum Power Dissipation - BSS138WH6327XTSA1


This n-channel enhancement device is a Compact surface-mount transistor designed for switching and amplification in constrained assemblies. It operates over a wide thermal range and is suited to environments requiring elevated temperature tolerance and standardised automotive qualification. The package facilitates automated soldering onto board assemblies where small-signal handling and thermal performance are required.

Features and Benefits:


• 60V maximum drain-source voltage enables higher-voltage switching capability
• 6000mΩ drain-source resistance reduces conduction losses for small currents
• 0.28A continuous drain current supports low-current signal paths
• 81W power-dissipation rating allows short-duration power handling
• +150°C maximum operating temperature sustains high-temperature operation

Applications


• Suitable for signal switching in Compact control modules
• Ideal for surface-mount power-management circuits on boards
• Used with automotive electronics requiring AEC‑Q101 qualification
• Can be used for low-current load drivers in portable devices

What are the permissible gate-voltage limits?


The gate may be driven up to 20V relative to the source before gate constraints are exceeded.

How does gate charge affect drive requirements?


An 80 nC typical gate charge at rated drive implies moderate transient energy is required from the gate driver.

What thermal extremes can the device withstand?


It operates down to -55°C and up to +150°C for broad environmental capability.

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