Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23

RS 제품 번호:: 826-9954
Distrelec 제품 번호:: 304-44-425
제조사 부품 번호:: BSS138NH6327XTSA2
제조업체:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 500 units)*

₩80,000.00

일시적 품절

2026년 8월 31일 부터 154,500 개 단위 배송

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수량	한팩당	릴당*
500 - 500	₩160.00	₩79,600.00
1000 - 1000	₩156.00	₩78,200.00
1500 +	₩154.00	₩76,800.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 826-9954
Distrelec 제품 번호:: 304-44-425
제조사 부품 번호:: BSS138NH6327XTSA2
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	230mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	6Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	360mW
	Typical Gate Charge Qg @ Vgs	1nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.83V
	Maximum Operating Temperature	150°C
	Height	1mm
	Standards/Approvals	No
	Length	2.9mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 230mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series SIPMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 6Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 360mW
	Typical Gate Charge Qg @ Vgs 1nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.83V
	Maximum Operating Temperature 150°C
	Height 1mm
	Standards/Approvals No
	Length 2.9mm
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 3.5Ω Maximum Drain Source Resistance - BSS138NH6433XTMA1

This MOSFET is a compact N-channel transistor designed for low-current switching in surface-mount applications. It operates across a wide temperature range, making it suitable for environments that demand extended thermal tolerance. The device is built for use where controlled enhancement-mode switching and modest power handling are required.

Features and Benefits:

• 60V drain voltage enables use in intermediate-voltage systems
• 3.5Ω low Rds(on) reduces conduction losses in small-signal circuits
• 230mA continuous drain current supports low-power switching loads
• 1nC typical gate charge allows fast gate transitions with minimal drive energy
• 360mW power dissipation helps manage thermal loading in constrained designs
• 20V maximum gate rating protects against excessive drive voltages

Applications

• Suitable for automotive sensor signal switching
• Ideal for handheld instrument power management
• Used with control logic in telematics modules
• Can be used for load switching in battery-operated devices
• Suitable for general-purpose small-signal switching on PCBs

What mounting style is required for this component?

It uses a SOT-23 package intended for surface-mount placement on printed circuit assemblies.

How does it cope with elevated operating temperatures?

The device is specified to function from -55°C up to 150°C, permitting use in high-temperature environments with appropriate thermal design.

What gate drive considerations should be observed?

Keep gate voltage within ±20V to avoid overstressing the gate oxide and ensure gate-drive circuits supply sufficient current for the 1nC typical gate charge.

Is this device suitable for high-current power stages?

It is intended for small-signal and low-current switching

the 230mA continuous drain current and 3.5Ω Rds(on) limit its suitability for high-current power stages.