Wolfspeed N-Channel MOSFET, 10.7 A, 1200 V Enhancement, 4-Pin TO-247 C3M0021120K
- RS 제품 번호:
- 248-8925
- 제조사 부품 번호:
- C3M0021120K
- 제조업체:
- Wolfspeed
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- RS 제품 번호:
- 248-8925
- 제조사 부품 번호:
- C3M0021120K
- 제조업체:
- Wolfspeed
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Wolfspeed | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 15V | |
| Typical Gate Charge Qg @ Vgs | 162nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 469W | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.13mm | |
| Standards/Approvals | No | |
| Height | 5.21mm | |
| Length | 23.63mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Wolfspeed | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 15V | ||
Typical Gate Charge Qg @ Vgs 162nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 469W | ||
Maximum Operating Temperature 175°C | ||
Width 16.13mm | ||
Standards/Approvals No | ||
Height 5.21mm | ||
Length 23.63mm | ||
Automotive Standard No | ||
The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs is a range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency
3rd generation SiC MOSFET technology
Low impedance package with driver source pin
8mm of creepage distance between drain and source
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
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