Wolfspeed Type N-Channel MOSFET, 10.7 A, 1200 V Enhancement, 4-Pin TO-247
- RS 제품 번호:
- 248-8924
- 제조사 부품 번호:
- C3M0021120K
- 제조업체:
- Wolfspeed
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 248-8924
- 제조사 부품 번호:
- C3M0021120K
- 제조업체:
- Wolfspeed
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Wolfspeed | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 162nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 469W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 23.63mm | |
| Standards/Approvals | No | |
| Height | 5.21mm | |
| Width | 16.13 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Wolfspeed | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 162nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 469W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Maximum Operating Temperature 175°C | ||
Length 23.63mm | ||
Standards/Approvals No | ||
Height 5.21mm | ||
Width 16.13 mm | ||
Automotive Standard No | ||
The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs is a range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency
3rd generation SiC MOSFET technology
Low impedance package with driver source pin
8mm of creepage distance between drain and source
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
관련된 링크들
- Wolfspeed Type N-Channel MOSFET, 10.7 A, 1200 V Enhancement, 4-Pin TO-247 C3M0021120K
- Wolfspeed Type N-Channel MOSFET, 31 A, 1200 V Enhancement, 3-Pin TO-247
- Wolfspeed Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 3-Pin TO-247
- Wolfspeed Type N-Channel MOSFET, 19 A, 1200 V Enhancement, 3-Pin TO-247
- Wolfspeed Type N-Channel MOSFET, 63 A, 1200 V Enhancement, 4-Pin TO-247
- Wolfspeed Type N-Channel MOSFET, 90 A, 1200 V Enhancement, 3-Pin TO-247
- Wolfspeed Type N-Channel MOSFET, 10.7 A, 1200 V Enhancement, 4-Pin TO-247
- Wolfspeed Type N-Channel MOSFET, 31 A, 1200 V Enhancement, 3-Pin TO-247 C2M0080120D