제조사부품번호

Wolfspeed Type N-Channel MOSFET, 90 A, 1200 V Enhancement, 3-Pin TO-247

RS 제품 번호:: 145-6863
제조사 부품 번호:: C2M0025120D
제조업체:: Wolfspeed

Wolfspeed Type N-Channel MOSFET, 90 A, 1200 V Enhancement, 3-Pin TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩4,416,966.00

재고있음

960 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 30	₩147,232.20	₩4,416,982.92
60 - 90	₩142,816.08	₩4,284,482.40
120 +	₩138,531.56	₩4,155,946.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 145-6863
제조사 부품 번호:: C2M0025120D
제조업체:: Wolfspeed

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Wolfspeed
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	34mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	3.5V
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	463W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	161nC
	Maximum Operating Temperature	150°C
	Height	5.21mm
	Width	21.1 mm
	Length	16.13mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Wolfspeed
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 34mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 3.5V
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 463W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 161nC
	Maximum Operating Temperature 150°C
	Height 5.21mm
	Width 21.1 mm
	Length 16.13mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: CN

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology

• High Drain-Source breakdown voltages - up to 1200V

• Multiple devices are easy to parallel and simple to drive

• High speed switching with low on-resistance

• Latch-up resistant operation

Wolfspeed Type N-Channel MOSFET, 90 A, 1200 V Enhancement, 3-Pin TO-247

Wolfspeed Silicon Carbide Power MOSFETs

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