제조사부품번호

Wolfspeed Type N-Channel MOSFET, 19 A, 1200 V Enhancement, 3-Pin TO-247

RS 제품 번호:: 162-9709
제조사 부품 번호:: C2M0160120D
제조업체:: Wolfspeed

Wolfspeed Type N-Channel MOSFET, 19 A, 1200 V Enhancement, 3-Pin TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩596,486.40

마지막 RS 재고

최종적인 180 개 unit(s)이 배송 준비 됨

수량	한팩당	Per Tube*
30 - 120	₩19,882.88	₩596,486.40
150 +	₩19,484.32	₩584,546.52

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 162-9709
제조사 부품 번호:: C2M0160120D
제조업체:: Wolfspeed

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Wolfspeed
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	196mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	125W
	Typical Gate Charge Qg @ Vgs	34nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	3.9V
	Maximum Operating Temperature	150°C
	Width	5.21 mm
	Height	21.1mm
	Standards/Approvals	No
	Length	16.13mm
	Automotive Standard	No

	모두 선택
	브랜드 Wolfspeed
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 196mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 125W
	Typical Gate Charge Qg @ Vgs 34nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 3.9V
	Maximum Operating Temperature 150°C
	Width 5.21 mm
	Height 21.1mm
	Standards/Approvals No
	Length 16.13mm
	Automotive Standard No

COO (Country of Origin):: CN

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology

• High Drain-Source breakdown voltages - up to 1200V

• Multiple devices are easy to parallel and simple to drive

• High speed switching with low on-resistance

• Latch-up resistant operation

Wolfspeed Type N-Channel MOSFET, 19 A, 1200 V Enhancement, 3-Pin TO-247

Wolfspeed Silicon Carbide Power MOSFETs

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