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Infineon BSC0 N-Channel MOSFET, 381 A, 40 V N, 8-Pin TDSON-8 FL BSC019N06NSATMA1

RS 제품 번호:: 241-9873
제조사 부품 번호:: BSC019N06NSATMA1
제조업체:: Infineon

Infineon BSC0 N-Channel MOSFET, 381 A, 40 V N, 8-Pin TDSON-8 FL BSC019N06NSATMA1

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Subtotal (2 units, in packs of 2)*

₩8,060.00

3,624 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 8	₩4,030.00	₩8,060.00
10 - 98	₩3,930.00	₩7,860.00
100 - 248	₩3,840.00	₩7,680.00
250 - 498	₩3,760.00	₩7,520.00
500 +	₩3,670.00	₩7,340.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 241-9873
제조사 부품 번호:: BSC019N06NSATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	381A
	Maximum Drain Source Voltage Vds	40V
	Series	BSC0
	Package Type	TDSON-8 FL
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 381A
	Maximum Drain Source Voltage Vds 40V
	Series BSC0
	Package Type TDSON-8 FL
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - BSC019N06NSATMA1

Infineon BSC0 Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC019N06NSATMA1

This MOSFET is a high-current N-channel switching device designed for surface-mount power applications where low on-resistance and fast gate response are required. It operates across a wide temperature span suitable for demanding environments and is supplied in a Compact TDSON-8 FL package for board-level integration.

Features and Benefits:

• Ultra-low Rds(on) 0.7 mΩ reduces conduction losses and heat generation
• Maximum continuous Id 381 A supports high-current delivery in systems
• Vds 40 V permits use in mid-voltage power rails and converters
• Pd 81 W enables significant power handling without immediate thermal runaway
• Qg 80 nC gate charge allows Rapid switching for dynamic loads
• Vgs 20 V gate rating affords flexible gate-drive voltages for control circuits

Applications

• Suitable for high-current synchronous rectification stages
• Ideal for power conversion in server and telecoms equipment
• Used for motor-drive half-bridges and H‑bridge configurations
• Can be used for battery management and DC-DC converters
• Used with high-power MOSFET arrays on Compact power boards

What package and mounting style does it use?

It is supplied in a TDSON-8 FL package and intended for surface mounting on PCBs.

What thermal range can it withstand in operation?

The device functions between −55 °C and 175 °C for extended environmental tolerance.

What characteristic affects switching speed and gate drive requirements?

The typical gate charge is 80 nC which determines drive current and switching transitions.

How does the forward voltage impact conduction performance?

A forward voltage of 1 V influences power loss during conduction and must be accounted for in thermal design.