Infineon BSC N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC0902NSATMA1
- RS 제품 번호:
- 273-2631
- 제조사 부품 번호:
- BSC0902NSATMA1
- 제조업체:
- Infineon
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Subtotal (1 reel of 5000 units)*
₩48,800,000.00
일시적 품절
- 2027년 3월 18일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 5000 + | ₩9,760.00 | ₩48,799,000.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-2631
- 제조사 부품 번호:
- BSC0902NSATMA1
- 제조업체:
- Infineon
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TDSON | |
| Series | BSC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 4.5V | |
| Maximum Operating Temperature | +150°C | |
| Length | 6.1mm | |
| Standards/Approvals | RoHS | |
| Width | 5.35mm | |
| Height | 350μm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TDSON | ||
Series BSC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 4.5V | ||
Maximum Operating Temperature +150°C | ||
Length 6.1mm | ||
Standards/Approvals RoHS | ||
Width 5.35mm | ||
Height 350μm | ||
Automotive Standard No | ||
Infineon BSC Series MOSFET, 30V Maximum Drain-Source Voltage, 100A Maximum Continuous Drain Current - BSC0902NSATMA1
This MOSFET is an N-channel enhancement-mode transistor supplied in an 8-pin TDSON package for surface mounting. It is designed to switch and control high currents at low voltages while operating across a wide ambient range. The device is suitable for applications requiring logic-level gate drive and a Compact board footprint, and it conforms to RoHS environmental standards.
Features and Benefits:
• 2.6mΩ Rds(on) reduces conduction losses during high-current operation
• 4.5V maximum gate drive enables low-voltage logic-level switching
• 100A continuous drain capacity supports heavy current loads
• -55°C to +150°C operating range sustains performance in harsh temperatures
• TDSON surface package allows Compact board-level power density
• 4.5V maximum gate drive enables low-voltage logic-level switching
• 100A continuous drain capacity supports heavy current loads
• -55°C to +150°C operating range sustains performance in harsh temperatures
• TDSON surface package allows Compact board-level power density
Applications
• Suitable for DC power distribution in low-voltage systems
• Ideal for motor drivers requiring high-current switching
• Used with battery management circuits in Compact assemblies
• Can be used for synchronous rectification in power converters
• Useful in board-level high-current load switching modules
• Ideal for motor drivers requiring high-current switching
• Used with battery management circuits in Compact assemblies
• Can be used for synchronous rectification in power converters
• Useful in board-level high-current load switching modules
What gate voltage range should be observed for reliable operation?
Gate drive should not exceed the specified 4.5V maximum to avoid gate stress.
How does the package affect thermal management on the PCB?
The TDSON 8-pin surface package provides a Compact thermal path requiring an appropriate copper area for heat dissipation.
Is this device suitable for automotive qualification workflows?
The device is not specified as meeting automotive standards despite its wide temperature capability.
What channel conduction mode does the device use?
It operates in enhancement mode as an N-channel transistor.
What environmental compliance does it meet?
It is compliant with RoHS restrictions on hazardous substances.
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