Infineon BSC0 N-Channel MOSFET, 381 A, 60 V N, 8-Pin TDSON BSC027N06LS5ATMA1

RS 제품 번호:: 241-9874
제조사 부품 번호:: BSC027N06LS5ATMA1
제조업체:: Infineon

Infineon BSC0 N-Channel MOSFET, 381 A, 60 V N, 8-Pin TDSON BSC027N06LS5ATMA1

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Subtotal (5000 units, on reels of 5000)*

₩7,790,000.00

일시적 품절

2027년 10월 05일 부터 배송

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수량	한팩당	릴당*
5000 - 5000	₩1,558.00	₩7,793,000.00
10000 - 10000	₩1,528.00	₩7,637,000.00
15000 +	₩1,496.00	₩7,484,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 241-9874
제조사 부품 번호:: BSC027N06LS5ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	381A
	Maximum Drain Source Voltage Vds	60V
	Series	BSC0
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	N
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 381A
	Maximum Drain Source Voltage Vds 60V
	Series BSC0
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode N
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - BSC027N06LS5ATMA1

Infineon BSC0 Series MOSFET, 60V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC027N06LS5ATMA1

This MOSFET is a high-current N-channel power transistor designed for surface-mount applications where efficient switching and thermal endurance are required in demanding temperature ranges. It operates as a logic-compatible switch for power stages, delivering substantial continuous current capability while remaining suitable for Compact board layouts and assemblies that require low on-resistance and controlled gate drive characteristics.

Features and Benefits:

• 60V drain voltage limits enable robust medium-voltage switching
• 381A continuous current delivers high sustained load capacity
• 0.7mΩ Rds(on) reduces conduction losses under heavy loads
• 81W power dissipation allows significant thermal headroom
• 80nC typical gate charge supports Faster switching with moderate drive
• 1.2V forward diode voltage minimises recovery stress during commutation

Applications

• Suitable for high-current motor driver stages on Compact boards
• Ideal for synchronous rectification in power converters
• Used with battery management systems requiring low conduction loss
• Can be used for switch stages in DC-DC power modules
• Appropriate for industrial drives operating across wide temperatures

What gate drive margin is recommended for reliable switching?

A gate drive up to the maximum 20V Vgs is permissible but typical logic-level drive should consider the 80nC gate charge when sizing the driver to achieve desired transition speeds.

How does thermal performance affect layout and cooling?

With an 81W maximum dissipation rating, board design should provide adequate copper area and thermal vias to conduct heat away from the TDSON package for sustained high-current operation.

What environmental range can it tolerate during operation?

It functions across a wide ambient span from -55°C up to +150°C, supporting designs exposed to extreme temperatures.

How does the intrinsic diode behaviour influence switching events?

The 1.2V forward diode characteristic reduces Peak reverse recovery stress during mode changes, impacting snubber and clamp requirements.