Infineon OptiMOS™ Type N-Channel MOSFET, 381 A, 40 V Enhancement, 8-Pin TDSON BSC0901NSATMA1
- RS 제품 번호:
- 133-9798
- 제조사 부품 번호:
- BSC0901NSATMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩6,166.40
마지막 RS 재고
- 최종적인 55 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 1245 | ₩1,233.28 | ₩6,166.40 |
| 1250 - 2495 | ₩1,199.44 | ₩5,997.20 |
| 2500 + | ₩1,184.40 | ₩5,922.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 133-9798
- 제조사 부품 번호:
- BSC0901NSATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS™ | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.35 mm | |
| Length | 5.35mm | |
| Standards/Approvals | RoHS | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS™ | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 150°C | ||
Width 6.35 mm | ||
Length 5.35mm | ||
Standards/Approvals RoHS | ||
Height 1.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
관련된 링크들
- Infineon OptiMOS Type N-Channel MOSFET, 13 A, 34 V Enhancement, 8-Pin TDSON BSC0996NSATMA1
- Infineon BSC Type N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC0901NSATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 46 A, 60 V Enhancement, 8-Pin TDSON BSC097N06NSATMA1
- Infineon BSC Type N-Channel MOSFET, 381 A, 40 V N, 8-Pin TDSON BSC034N06NSATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin TDSON BSC039N06NSATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin TDSON BSC016N06NSATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin TDSON BSC028N06NSATMA1
- Infineon BSC0 Type N-Channel MOSFET, 381 A, 40 V N, 8-Pin TDSON-8 FL BSC019N06NSATMA1