제조사부품번호

onsemi NTHL Type N-Channel MOSFET, 58 A, 1200 V, 5-Pin TO-247 NTHL045N065SC1

RS 제품 번호:: 241-0744
제조사 부품 번호:: NTHL045N065SC1
제조업체:: onsemi

onsemi NTHL Type N-Channel MOSFET, 58 A, 1200 V, 5-Pin TO-247 NTHL045N065SC1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩18,536.80

재고있음

349 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
1 - 9	₩18,536.80
10 - 24	₩18,085.60
25 - 49	₩17,653.20
50 - 99	₩17,239.60
100 +	₩16,807.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 241-0744
제조사 부품 번호:: NTHL045N065SC1
제조업체:: onsemi

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	58A
	Maximum Drain Source Voltage Vds	1200V
	Series	NTHL
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	5
	Maximum Drain Source Resistance Rds	22mΩ
	Typical Gate Charge Qg @ Vgs	105nC
	Maximum Power Dissipation Pd	117W
	Maximum Gate Source Voltage Vgs	22 V
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 58A
	Maximum Drain Source Voltage Vds 1200V
	Series NTHL
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 5
	Maximum Drain Source Resistance Rds 22mΩ
	Typical Gate Charge Qg @ Vgs 105nC
	Maximum Power Dissipation Pd 117W
	Maximum Gate Source Voltage Vgs 22 V
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - NTHL045N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L

The ON Semiconductor 650 V, 42 mΩ N-Channel silicon carbide MOSFET. Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

High Junction Temperature

High Speed Switching and Low Capacitance

Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 66A

onsemi NTHL Type N-Channel MOSFET, 58 A, 1200 V, 5-Pin TO-247 NTHL045N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L

관련된 링크들