onsemi NTHL Type N-Channel MOSFET, 58 A, 1200 V, 5-Pin TO-247
- RS 제품 번호:
- 241-0743
- 제조사 부품 번호:
- NTHL045N065SC1
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tube of 450 units)*
₩6,288,165.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 450 - 450 | ₩13,973.70 | ₩6,288,603.75 |
| 900 - 900 | ₩13,854.75 | ₩6,234,286.50 |
| 1350 + | ₩13,577.85 | ₩6,109,681.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 241-0743
- 제조사 부품 번호:
- NTHL045N065SC1
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTHL | |
| Mount Type | Through Hole | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTHL | ||
Mount Type Through Hole | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L
The ON Semiconductor 650 V, 42 mΩ N-Channel silicon carbide MOSFET. Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Junction Temperature
High Speed Switching and Low Capacitance
Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 66A
관련된 링크들
- onsemi NTHL Type N-Channel MOSFET, 58 A, 1200 V, 5-Pin TO-247 NTHL045N065SC1
- onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 3-Pin TO-247 NTHL025N065SC1
- onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 3-Pin TO-247 NTHL060N065SC1
- onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247 NTHL015N065SC1
- onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 3-Pin TO-247
- onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247
- onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247
- onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin HPSOF-8L