onsemi NTB N-Channel MOSFET, 58 A, 1.2 kV Enhancement, 7-Pin HPSOF-8L NTBL045N065SC1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기
현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
포장 옵션
RS 제품 번호:
254-7667
제조사 부품 번호:
NTBL045N065SC1
제조업체:
onsemi
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

onsemi

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

1.2kV

Package Type

HPSOF-8L

Series

NTB

Mount Type

Through Hole

Pin Count

7

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

117W

Forward Voltage Vf

4.5V

Typical Gate Charge Qg @ Vgs

105nC

Maximum Gate Source Voltage Vgs

22V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - 33 mohm, 650 V, M2, TOLL


The ON Semiconductor NTB series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Zero reverse recovery current of body diode

Ultra low gate charge

High speed switching and low capacitance

관련된 링크들