onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin HPSOF-8L NTBL045N065SC1
- RS 제품 번호:
- 254-7667
- 제조사 부품 번호:
- NTBL045N065SC1
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩16,619.20
재고있음
- 1,978 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩16,619.20 |
| 10 - 99 | ₩15,228.00 |
| 100 - 249 | ₩14,607.60 |
| 250 - 499 | ₩12,896.80 |
| 500 + | ₩12,633.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 254-7667
- 제조사 부품 번호:
- NTBL045N065SC1
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | HPSOF-8L | |
| Series | NTB | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 117W | |
| Forward Voltage Vf | 4.5V | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type HPSOF-8L | ||
Series NTB | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 117W | ||
Forward Voltage Vf 4.5V | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - 33 mohm, 650 V, M2, TOLL
The ON Semiconductor NTB series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Zero reverse recovery current of body diode
Ultra low gate charge
High speed switching and low capacitance
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