Vishay SIHK Type N-Channel MOSFET, 21 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3

RS 제품 번호:: 268-8313
제조사 부품 번호:: SIHK125N60EF-T1GE3
제조업체:: Vishay

Vishay SIHK Type N-Channel MOSFET, 21 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3

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Subtotal (1 pack of 2 units)*

₩16,555.50

추가로 2026년 6월 29일 부터 1,996 개 단위 배송

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수량	한팩당	한팩당*
2 - 48	₩8,277.75	₩16,555.50
50 - 98	₩7,449.00	₩14,898.00
100 - 248	₩6,113.25	₩12,226.50
250 +	₩5,986.50	₩11,973.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 268-8313
제조사 부품 번호:: SIHK125N60EF-T1GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	SIHK
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.125Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	132W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	45nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	9.9mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series SIHK
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.125Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 132W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 45nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 9.9mm
	Automotive Standard No

Datasheet - SIHK125N60EF-T1GE3

COO (Country of Origin):: CN

Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 21A Maximum Continuous Drain Current - SIHK125N60EF-T1GE3

This MOSFET is a high-voltage N-channel switching transistor designed for power conversion and control on printed circuit boards. It suits demanding electrical and electronic systems where elevated drain-to-source voltage handling and substantial current capability are required. The device is supplied in a Compact PowerPAK 10x12 package for PCB mounting and is intended for applications that operate across a wide temperature range.

Features and Benefits:

• 650V drain-to-source rating enables high-voltage switching
• 21A continuous drain current supports heavy load duty
• 0.125Ω Rds(on) reduces conduction losses at operating current
• 45nC typical gate charge allows efficient gate-drive management
• 132W power dissipation permits substantial thermal loading

Applications

• Suitable for industrial motor drive inverter stages
• Ideal for high-voltage power supplies in automation systems
• Used for switch-mode power conversion in electrical equipment
• Can be used for medium-power traction and conversion modules

What voltage stress can it withstand in switching circuits?

It can handle up to 650V between drain and source, making it appropriate for high-voltage topologies.

How does gate-charge affect drive design?

A typical gate charge of 45nC informs gate-driver current and switching-loss calculations during transition events.

What thermal extremes can it operate within?

Operational limits span from -55°C at the low end to 150°C at the high end for junction temperatures.

How many pins and what mounting style does it use?

It is an 8-pin device intended for PCB mounting in a PowerPAK 10x12 footprint.

What is the maximum permissible gate voltage?

The gate may be driven up to 30V relative to source without exceeding its gate‑source rating.