Vishay SIH Type N-Channel MOSFET, 20 A, 850 V TO-247AC SIHG24N80AEF-GE3
- RS 제품 번호:
- 239-5377
- 제조사 부품 번호:
- SIHG24N80AEF-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩14,645.20
마지막 RS 재고
- 최종적인 522 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩7,322.60 | ₩14,645.20 |
| 10 - 24 | ₩7,106.40 | ₩14,212.80 |
| 26 - 98 | ₩6,890.20 | ₩13,780.40 |
| 100 - 498 | ₩6,683.40 | ₩13,366.80 |
| 500 + | ₩6,486.00 | ₩12,972.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 239-5377
- 제조사 부품 번호:
- SIHG24N80AEF-GE3
- 제조업체:
- Vishay
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-247AC | |
| Series | SIH | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 0.17Ω | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-247AC | ||
Series SIH | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 0.17Ω | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay EF series power MOSFET has drain current of 20 A. It is used for server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC)
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
관련된 링크들
- Vishay SIH Type N-Channel MOSFET, 20 A, 850 V TO-247AC SIHG24N80AEF-GE3
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- Vishay E Type N-Channel MOSFET, 16.3 A, 850 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET, 21 A, 850 V Enhancement, 3-Pin TO-247 SIHG24N80AE-GE3
- Vishay SIH Type N-Channel MOSFET, 20 A, 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3
- Vishay EF Type N-Channel Single MOSFETs, 8 A, 800 V Enhancement, 3-Pin TO-247AC SIHG11N80AEF-GE3
- Vishay SIHG Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3
