Vishay EF Type N-Channel Power MOSFET, 20 A, 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3

RS 제품 번호:: 239-5383
제조사 부품 번호:: SIHP24N80AEF-GE3
제조업체:: Vishay

Vishay EF Type N-Channel Power MOSFET, 20 A, 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3

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Subtotal (1 pack of 2 units)*

₩9,516.00

추가로 2026년 6월 29일 부터 40 개 단위 배송

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수량	한팩당	한팩당*
2 - 8	₩4,758.00	₩9,516.00
10 - 18	₩4,621.50	₩9,243.00
20 - 24	₩4,485.00	₩8,970.00
26 - 98	₩4,338.75	₩8,677.50
100 +	₩4,221.75	₩8,443.50

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 239-5383
제조사 부품 번호:: SIHP24N80AEF-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	800V
	Series	EF
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.195Ω
	Typical Gate Charge Qg @ Vgs	90nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	208W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 800V
	Series EF
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.195Ω
	Typical Gate Charge Qg @ Vgs 90nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 208W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHP24N80AEF-GE3

Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 20A Drain Current - SIHP24N80AEF-GE3

This power MOSFET is a high-voltage N-channel switching device designed for power conversion and control in industrial electronic systems. It is supplied in a through-hole TO-220AB package for straightforward mounting and heat-sink attachment, and it is intended for applications that require robust voltage handling and elevated operating temperatures.

Features and Benefits:

• 800V drain rating enables high-voltage switching applications • 20A continuous drain current supports significant load currents • 0.195Ω Rds(on) reduces conduction losses under load • 208W power dissipation allows higher thermal loading • 90nC typical gate charge facilitates switching performance optimisation • 150°C maximum junction temperature endures elevated thermal environments

Applications

• Suitable for high-voltage power supplies and converters • Ideal for industrial motor drive switching stages • Used for switched-mode power supplies in automation equipment • Can be used for power regulation in electrical control panels

What gate voltage limits must be observed during drive design?

The device requires gate drive voltages within ±30V maximum between gate and source to avoid gate overstress.

How should thermal management be approached for sustained operation?

Use a heat-sink attached to the TO-220AB tab and ensure adequate airflow to handle up to 208W dissipation under specified mounting and cooling conditions.

What temperature range is acceptable for deployment in harsh environments?

The component operates from -55°C up to a maximum of 150°C junction temperature, permitting use in elevated-temperature assemblies.

Are there considerations for switching speed versus drive energy?

The typical gate charge of 90nC requires sufficient drive current to achieve desired switching times while managing gate-drive energy and EMI.