Vishay EF Type N-Channel Power MOSFET, 13 A, 800 V, 3-Pin TO-247AC SIHG15N80AEF-GE3

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₩31,380.00

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5 - 5₩6,276.00₩31,380.00
10 - 20₩6,164.00₩30,820.00
25 +₩6,044.00₩30,220.00

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포장 옵션
RS 제품 번호:
225-9914
제조사 부품 번호:
SIHG15N80AEF-GE3
제조업체:
Vishay
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모두 선택

브랜드

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-247AC

Series

EF

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

350mΩ

Maximum Power Dissipation Pd

156W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

53nC

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

2.39mm

Standards/Approvals

RoHS

Height

10.41mm

Length

6.73mm

Automotive Standard

No

Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 13A Continuous Drain Current - SIHG15N80AEF-GE3


This power MOSFET is a high-voltage N-channel switching device designed for demanding power-electronic environments. It is intended for use where robust high-voltage handling and significant continuous current capability are required, operating across a wide ambient temperature range and supplied in a TO-247AC package for mounting on surfaces.

Features and Benefits:


• 800V drain-to-source rating enables high-voltage system integration
• 13A continuous drain current supports moderate power throughput
• 350mΩ low Rds(on) reduces conduction losses during operation
• 156W power dissipation allows sustained thermal loading
• 53nC typical gate charge facilitates predictable switching performance
• ±30V gate tolerance permits wide control-voltage flexibility

Applications


• Used for high-voltage power conversion stages
• Suitable for industrial motor drive switching
• Ideal for switch-mode power supplies in energy systems
• Can be used for clamped inductive load switching
• Used with gate drivers for fast-switching topologies

What temperature extremes can it withstand in operation?


It is rated for continuous operation from -55°C up to 150°C, allowing use in both cold and high-temperature environments.

How does the package affect thermal and mounting choices?


The TO-247AC surface package provides a large thermal pad area suitable for heatsinking and straightforward solder or clip mounting to manage dissipation.

What gate-drive constraints should be observed?


The device tolerates gate-source voltages up to 30V, so gate drivers should be selected to stay within that limit to avoid gate overstress.

What forward conduction behaviour can be expected during switching transitions?


The forward voltage is specified at 1.2V, which informs predicted conduction voltage drop during the on-state and helps size snubbers or clamp networks.

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