Vishay EF Type N-Channel Power MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3

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포장 옵션
RS 제품 번호:
268-8297
제조사 부품 번호:
SIHG085N60EF-GE3
제조업체:
Vishay
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모두 선택

브랜드

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

650V

Series

EF

Package Type

TO-247AC

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.084Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

63nC

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

184W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

15.7mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN

Vishay Series EF Power MOSFET, 650V Maximum Drain Source Voltage, 34A Maximum Continuous Drain Current - SIHG085N60EF-GE3


This power MOSFET is a high-voltage N‑channel switching device designed for through‑hole mounting in power assemblies. It is intended for use where robust high-voltage switching and efficient conduction are required across extended temperature ranges, and it conforms to RoHS environmental restrictions.

Features and Benefits:


• 650V drain rating enables high-voltage switching applications
• 34A continuous drain current supports substantial load handling
• 0.084Ω Rds(on) reduces conduction losses under load
• 184W power dissipation allows significant thermal throughput
• 63nC typical gate charge offers predictable drive requirements
• -55°C to 150°C operating range permits harsh environment use

Applications


• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor drive inversion stages
• Used with discrete power converters in robotics
• Can be used for inverter front-end switching stages
• Suitable for power factor correction circuits

What package and mounting style does it use?


It is supplied in a TO-247AC package and designed for through‑hole mounting to enable secure board fixation and straightforward heatsinking.

What gate drive voltage limits should I observe?


The maximum gate‑to‑source rating is 30V, so gate drive circuitry must remain within this boundary to prevent gate damage.

How does thermal performance relate to installation?


The device’s 184W dissipation rating requires adequate heatsinking and thermal management to maintain junction temperatures below specified limits during high‑power operation.

Is it suitable for automotive systems?


It is not specified to automotive standards

suitability depends on system safety and qualification requirements beyond the provided ratings.

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