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onsemi NTH Type N-Channel MOSFET, 68 A, 1200 V N, 4-Pin TO-247 NTH4L022N120M3S

RS 제품 번호:: 233-6854
제조사 부품 번호:: NTH4L022N120M3S
제조업체:: onsemi

onsemi NTH Type N-Channel MOSFET, 68 A, 1200 V N, 4-Pin TO-247 NTH4L022N120M3S

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₩22,184.00

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283 개 단위 배송 준비 완료

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RS 제품 번호:: 233-6854
제조사 부품 번호:: NTH4L022N120M3S
제조업체:: onsemi

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모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	68A
	Maximum Drain Source Voltage Vds	1200V
	Series	NTH
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	30mΩ
	Channel Mode	N
	Maximum Gate Source Voltage Vgs	-0.45 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	151nC
	Maximum Power Dissipation Pd	325W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Width	5.2 mm
	Height	41.36mm
	Length	15.8mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 68A
	Maximum Drain Source Voltage Vds 1200V
	Series NTH
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 30mΩ
	Channel Mode N
	Maximum Gate Source Voltage Vgs -0.45 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 151nC
	Maximum Power Dissipation Pd 325W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Width 5.2 mm
	Height 41.36mm
	Length 15.8mm
	Automotive Standard No

Datasheet - NTH4L022N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L

The ON Semiconductor NTH4L022N120M3S is SiC power, single N-Channel MOSFET. It is available in a TO247-4L package. With Drain to Source voltage of 1200 V and continuous drain current of 68 A, the NTH4L022N120M3S is used in applications like Solar Inverters, Electric Vehicle Charging Stations, UPS (Uninterruptible Power Supplies), Energy Storage Systems, SMPS (Switch Mode Power Supplies).

The typical RDS(on) for this device is 22 mꭥ with VGS of 18 V

The device offers low switching losses

It is 100% avalanche tested

onsemi NTH Type N-Channel MOSFET, 68 A, 1200 V N, 4-Pin TO-247 NTH4L022N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L

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