Infineon ISC N-Channel MOSFET, 288 A, 60 V Enhancement, 8-Pin TDSON ISZ034N06LM5ATMA1

RS 제품 번호:: 233-4397
제조사 부품 번호:: ISZ034N06LM5ATMA1
제조업체:: Infineon

Infineon ISC N-Channel MOSFET, 288 A, 60 V Enhancement, 8-Pin TDSON ISZ034N06LM5ATMA1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (10 units, in packs of 10)*

₩31,860.00

일시적 품절

2027년 10월 11일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 10	₩3,186.00	₩31,860.00
20 - 90	₩3,122.00	₩31,220.00
100 - 240	₩3,060.00	₩30,600.00
250 - 490	₩2,998.00	₩29,980.00
500 +	₩2,936.00	₩29,360.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 233-4397
제조사 부품 번호:: ISZ034N06LM5ATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	288A
	Maximum Drain Source Voltage Vds	60V
	Series	ISC
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.4mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	83W
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	53nC
	Maximum Operating Temperature	175°C
	Length	3.4mm
	Height	3.4mm
	Width	1.1mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 288A
	Maximum Drain Source Voltage Vds 60V
	Series ISC
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.4mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 83W
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 53nC
	Maximum Operating Temperature 175°C
	Length 3.4mm
	Height 3.4mm
	Width 1.1mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - ISZ034N06LM5ATMA1

Infineon ISC Series MOSFET, 60V Maximum Drain Source Voltage, 288A Maximum Continuous Drain Current - ISZ034N06LM5ATMA1

This MOSFET is a surface-mount N-channel enhancement device designed for high-current switching in Compact power assemblies. It operates across a wide ambient temperature range and is suited to applications requiring low conduction losses and Rapid gate-driven switching, while being housed in a small TDSON package.

Features and Benefits:

• Maximum continuous drain current 288A for heavy current handling
• Low drain-source resistance 3.4mΩ to reduce conduction losses
• 60V drain-source rating for medium-voltage power stages
• Typical gate charge 53nC enabling efficient switching transitions
• Maximum power dissipation 83W to sustain elevated load conditions
• Gate-source withstand 20V for robust gate-drive margins

Applications

• Suitable for high-current motor-drive stages
• Used with synchronous buck converters in power supplies
• Ideal for DC power distribution and load switching
• Can be used for battery management and cell balancing
• Suitable for Compact surface-mount power assemblies

What allows operation across extreme temperature ranges?

Internal semiconductor structure and tested ratings permit use from −55°C up to 175°C.

How does the package support thermal management?

The TDSON surface-mount package provides a low-profile thermal path for heat dissipation within PCB layouts.

What gate-drive considerations are required for switching performance?

Drive circuitry should accommodate up to 20V gate-source excursion and manage the 53nC typical gate charge for desired switching speed.

How should designers account for conduction losses at high current?

Use the 3.4mΩ Rds(on) Value to calculate I²R losses and verify PCB copper and thermal vias to handle the resulting heat.

What Peak power capability is indicated for sustained operation?

The device is specified with a maximum power dissipation of 83W for continuous thermal design considerations.