Infineon ISC N-Channel MOSFET, 192 A, 100 V, 8-Pin TDSON ISC027N10NM6ATMA1

RS 제품 번호:: 235-4865
제조사 부품 번호:: ISC027N10NM6ATMA1
제조업체:: Infineon

Infineon ISC N-Channel MOSFET, 192 A, 100 V, 8-Pin TDSON ISC027N10NM6ATMA1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (2 units, in packs of 2)*

₩17,460.00

일시적 품절

2027년 9월 30일 부터 5,000 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 8	₩8,730.00	₩17,460.00
10 - 98	₩8,570.00	₩17,140.00
100 - 248	₩8,380.00	₩16,760.00
250 - 498	₩8,230.00	₩16,460.00
500 +	₩8,040.00	₩16,080.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 235-4865
제조사 부품 번호:: ISC027N10NM6ATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	192A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TDSON
	Series	ISC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.24mΩ
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	91nC
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	245W
	Maximum Operating Temperature	175°C
	Width	1.1mm
	Standards/Approvals	No
	Height	5.1mm
	Length	6.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 192A
	Maximum Drain Source Voltage Vds 100V
	Package Type TDSON
	Series ISC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.24mΩ
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 91nC
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 245W
	Maximum Operating Temperature 175°C
	Width 1.1mm
	Standards/Approvals No
	Height 5.1mm
	Length 6.1mm
	Automotive Standard No

Datasheet - ISC027N10NM6ATMA1

Infineon ISC Series MOSFET, 100V Maximum Drain Source Voltage, 245W Maximum Power Dissipation - ISC027N10NM6ATMA1

This MOSFET is a high-current switching transistor designed for power conversion and motor-drive environments, offering robust operation across a wide temperature range and a surface-mount footprint suited to Compact assemblies. It provides low conduction loss and substantial current handling for demanding applications where voltage blocking and gate control are critical.

Features and Benefits:

• 100 V drain rating enables high-voltage switching capability
• 192 A continuous drain current supports heavy-load operation
• 2.24 mΩ Rds(on) minimises conduction losses for efficiency
• 245 W power dissipation allows sustained power handling
• 91 nC typical gate charge balances drive requirements and switching speed
• 20 V gate-source rating permits wide gate drive headroom

Applications

• Suitable as a 100 V, 192 A power MOSFET for motor-drive
• Ideal for high-current DC-DC converters in Compact systems
• Used with battery management and traction inverter stages
• Can be used for power stages requiring low Rds(on) MOSFETs with 245 W power dissipation
• Suitable for high-temperature MOSFET environments from −55 °C to 175 °C

What mounting style is used for this component?

It is supplied in an 8‑pin TDSON surface-mount package designed for board-level assembly.

What thermal extremes can this device tolerate during operation?

The operational range extends from −55 °C up to 175 °C, allowing use in elevated-temperature conditions.

What is the forward voltage characteristic during conduction?

The forward voltage Vf is specified at 1 V under conduction conditions.

How many pins does this package present for PCB layout considerations?

The device has an 8‑pin configuration for thermal and electrical termination.