Infineon ISC N-Channel MOSFET, 288 A, 60 V Enhancement, 8-Pin TDSON ISC011N06LM5ATMA1

RS 제품 번호:: 233-4393
제조사 부품 번호:: ISC011N06LM5ATMA1
제조업체:: Infineon

Infineon ISC N-Channel MOSFET, 288 A, 60 V Enhancement, 8-Pin TDSON ISC011N06LM5ATMA1

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Subtotal (1 pack of 5 units)*

₩46,160.00

4,930 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 5	₩9,232.00	₩46,160.00
10 - 95	₩9,048.00	₩45,240.00
100 - 245	₩8,860.00	₩44,300.00
250 - 495	₩8,692.00	₩43,460.00
500 +	₩8,516.00	₩42,580.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 233-4393
제조사 부품 번호:: ISC011N06LM5ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	288A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TDSON
	Series	ISC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.15mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.89kW
	Typical Gate Charge Qg @ Vgs	170nC
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	175°C
	Length	6.1mm
	Width	1.2mm
	Standards/Approvals	No
	Height	5.35mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 288A
	Maximum Drain Source Voltage Vds 60V
	Package Type TDSON
	Series ISC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.15mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.89kW
	Typical Gate Charge Qg @ Vgs 170nC
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 175°C
	Length 6.1mm
	Width 1.2mm
	Standards/Approvals No
	Height 5.35mm
	Automotive Standard No

Datasheet - ISC011N06LM5ATMA1

Infineon ISC Series MOSFET, 60V Maximum Drain Source Voltage, 288A Maximum Continuous Drain Current - ISC011N06LM5ATMA1

This MOSFET is a power switching transistor designed for high-current, high-power applications in surface-mount assemblies. It operates across a wide thermal range and is suitable for demanding electronic systems that require an N-channel enhancement device with robust drain-to-source capability and gate voltage tolerance.

Features and Benefits:

• 60V drain withstand enables high-voltage switching capability
• 288A continuous current supports heavy-load conduction
• 1.15mΩ Rds(on) minimises conduction losses under load
• 1.89kW power dissipation permits high-power handling
• 170nC gate charge enables controlled switching dynamics
• 20V gate rating allows wide gate drive margin

Applications

• Suitable for high current converters and power supplies
• Used with motor drives requiring strong conduction capacity
• Ideal for DC-DC stages in high-power systems
• Can be used for server and telecoms power modules
• Suitable for surface-mount power stages on Compact boards

What temperature range can it reliably operate within?

It functions from -55°C up to 175°C, allowing use across extreme thermal environments.

What mounting style is recommended for board assembly?

It comes in a TDSON package intended for surface mounting on PCBs.

How many pins does the package present for connections?

The device uses an 8-pin configuration to accommodate gate, drain and source terminations.

What channel type and mode determine its conduction behaviour?

It is an N-channel device operating in enhancement mode for standard MOS switching.

What physical footprint should designers allow for on the PCB?

The package measures 6.1 x 5.35 x 1.2 mm and should be allotted appropriate solder landing area.