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Infineon BSC N-Channel MOSFET, 381 A, 40 V N, 8-Pin TDSON BSC034N10LS5ATMA1

RS 제품 번호:: 241-9970
제조사 부품 번호:: BSC034N10LS5ATMA1
제조업체:: Infineon

Infineon BSC N-Channel MOSFET, 381 A, 40 V N, 8-Pin TDSON BSC034N10LS5ATMA1

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Subtotal (1 unit)*

₩3,900.00

3,522 개 단위 배송 준비 완료

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RS 제품 번호:: 241-9970
제조사 부품 번호:: BSC034N10LS5ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	381A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TDSON
	Series	BSC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 381A
	Maximum Drain Source Voltage Vds 40V
	Package Type TDSON
	Series BSC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - BSC034N10LS5ATMA1

Infineon BSC Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC034N10LS5ATMA1

This MOSFET is a high-current N-channel device designed for power switching and conversion in surface-mount applications. It operates across an extended temperature range and is suitable for environments requiring robust thermal tolerance and low conduction losses. The component is presented in a TDSON package for board-mounted power stages and complies with RoHS.

Features and Benefits:

• 40V rating for intermediate-voltage power stages
• 381A continuous drain current for high-current delivery
• 0.7mΩ Rds(on) to reduce conduction losses
• 81W power dissipation for sustained thermal performance
• 80nC typical gate charge for predictable switching control
• Gate-source withstand up to 20V for flexible drive margins

Applications

• Suitable for high-current DC-DC converters in power supplies
• Ideal for synchronous rectification in switching regulators
• Used with motor drivers requiring low conduction loss
• Can be used for server power distribution modules
• Appropriate for industrial power management assemblies

What ambient temperatures can it withstand in operation?

It operates from -55°C up to +150°C, allowing use in wide-temperature environments.

How does the device help reduce heat in dense power systems?

The low drain-source resistance minimises I2R losses, lowering heat generation during conduction.

What mounting method is required for board assembly?

It is intended for surface mounting in a TDSON package to facilitate Compact power layouts.

How much forward voltage drop is typical under conduction?

The forward voltage is specified at 1.1V for conditions where Vgs and Id produce forward conduction.