STMicroelectronics STB37N60 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263

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RS 제품 번호:
233-3038
제조사 부품 번호:
STB37N60DM2AG
제조업체:
STMicroelectronics
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브랜드

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

28A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

STB37N60

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

94mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

54nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Power Dissipation Pd

210W

Maximum Operating Temperature

150°C

Length

15.85mm

Height

4.6mm

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

The STMicroelectronics high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Designed for automotive applications and AEC-Q101 qualified

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

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