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STMicroelectronics STB37N60 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 STB37N60DM2AG

RS 제품 번호:: 233-3039
제조사 부품 번호:: STB37N60DM2AG
제조업체:: STMicroelectronics

STMicroelectronics STB37N60 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 STB37N60DM2AG

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Subtotal (1 unit)*

₩10,358.80

재고있음

970 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩10,358.80
10 - 99	₩10,170.80
100 - 249	₩9,982.80
250 - 499	₩9,794.80
500 +	₩9,625.60

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RS 제품 번호:: 233-3039
제조사 부품 번호:: STB37N60DM2AG
제조업체:: STMicroelectronics

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	28A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	STB37N60
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	94mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.6V
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	210W
	Typical Gate Charge Qg @ Vgs	54nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	AEC-Q101
	Length	15.85mm
	Width	10.4 mm
	Height	4.6mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 28A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series STB37N60
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 94mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.6V
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 210W
	Typical Gate Charge Qg @ Vgs 54nC
	Maximum Operating Temperature 150°C
	Standards/Approvals AEC-Q101
	Length 15.85mm
	Width 10.4 mm
	Height 4.6mm
	Automotive Standard AEC-Q101

Datasheet - STB37N60DM2AG

The STMicroelectronics high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Designed for automotive applications and AEC-Q101 qualified

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

STMicroelectronics STB37N60 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 STB37N60DM2AG

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