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STMicroelectronics STB Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-263 STB18N60M6

RS 제품 번호:: 192-4936
제조사 부품 번호:: STB18N60M6
제조업체:: STMicroelectronics

STMicroelectronics STB Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-263 STB18N60M6

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩21,074.80

일시적 품절

2026년 4월 28일 부터 배송

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수량	한팩당	한팩당*
5 - 245	₩4,214.96	₩21,074.80
250 - 495	₩4,113.44	₩20,567.20
500 +	₩4,045.76	₩20,228.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 192-4936
제조사 부품 번호:: STB18N60M6
제조업체:: STMicroelectronics

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	600V
	Series	STB
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	280mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	16.8nC
	Forward Voltage Vf	1.6V
	Maximum Power Dissipation Pd	110W
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Operating Temperature	150°C
	Length	10.4mm
	Height	4.37mm
	Standards/Approvals	No
	Width	9.35 mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 600V
	Series STB
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 280mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 16.8nC
	Forward Voltage Vf 1.6V
	Maximum Power Dissipation Pd 110W
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Operating Temperature 150°C
	Length 10.4mm
	Height 4.37mm
	Standards/Approvals No
	Width 9.35 mm
	Automotive Standard No

COO (Country of Origin):: CN

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Reduced switching losses

Lower RDS(on) per area vs previous generation

Low gate input resistance

Zener-protected

STMicroelectronics STB Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-263 STB18N60M6

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