STMicroelectronics MDmesh DM2 N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263 STB18N60DM2

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포장 옵션
RS 제품 번호:
111-6459
제조사 부품 번호:
STB18N60DM2
제조업체:
STMicroelectronics
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브랜드

STMicroelectronics

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

MDmesh DM2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

290mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

90W

Typical Gate Charge Qg @ Vgs

20nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-25V, +25V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Height

4.6mm

Length

9.35mm

Standards/Approvals

No

Width

10.4mm

Automotive Standard

No

N-Channel MDmesh DM2 Series, STMicroelectronics


The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability

AEC-Q101 qualified

MOSFET Transistors, STMicroelectronics


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