onsemi NTB7D Type N-Channel MOSFET, 101 A, 150 V Enhancement, 4-Pin TO-263 NTB7D3N15MC
- RS 제품 번호:
- 230-9081
- 제조사 부품 번호:
- NTB7D3N15MC
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩9,625.60
재고있음
- 추가로 2025년 12월 29일 부터 760 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩4,812.80 | ₩9,625.60 |
| 10 - 98 | ₩4,671.80 | ₩9,343.60 |
| 100 - 248 | ₩4,521.40 | ₩9,042.80 |
| 250 - 498 | ₩4,389.80 | ₩8,779.60 |
| 500 + | ₩4,258.20 | ₩8,516.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 230-9081
- 제조사 부품 번호:
- NTB7D3N15MC
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 101A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | NTB7D | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 73mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 166W | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 4.83 mm | |
| Height | 15.88mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 101A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series NTB7D | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 73mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 166W | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 4.83 mm | ||
Height 15.88mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET - N-channel shielded gate power trench MOSFET which has drain to source voltage of 150 V.
Optimized Switching performance
Max RDS(on) = 7.3 mΩ at VGS = 10 V, ID = 62A
Industry’s Lowest Qrr and softest Body-Diode for superior low noise switching
50% Lower Qrr than other MOSFET Suppliers
High efficiency with lower switching spike and EMI
Lowers Switching Noise/EMI
Improved switching FOM particularly Qgd
100% UIL Tested
No need or less snubber
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