onsemi NTB N-Channel MOSFET & Diode, 60 A, 100 V Enhancement, 3-Pin TO-263 NTBS9D0N10MC
- RS 제품 번호:
- 205-2496
- 제조사 부품 번호:
- NTBS9D0N10MC
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (10 units, in packs of 10)*
₩39,560.00
일시적 품절
- 2026년 10월 05일 부터 1,500 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 190 | ₩3,956.00 | ₩39,560.00 |
| 200 - 390 | ₩3,858.00 | ₩38,580.00 |
| 400 + | ₩3,800.00 | ₩38,000.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 205-2496
- 제조사 부품 번호:
- NTBS9D0N10MC
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | NTB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 68W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 14.6mm | |
| Width | 9.6mm | |
| Height | 4.6mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series NTB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 68W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 14.6mm | ||
Width 9.6mm | ||
Height 4.6mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor single N-channel 100V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Continuous Drain Current rating is 60A
Drain to source on resistance rating is 9.0mohm
Low RDS(on) to minimize conduction losses
Optimized switching performance
Low QG and capacitance to minimize driver losses
Industry’s lowest Qrr and softest body-diode for superior low noise switching
Lowers switching noise/EMI
High efficiency with lower switching spike and EMI
Package type is D2PAK3
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