제조사부품번호

onsemi NTB Type N-Channel MOSFET & Diode, 60 A, 100 V Enhancement, 3-Pin TO-263 NTBS9D0N10MC

RS 제품 번호:: 205-2496
제조사 부품 번호:: NTBS9D0N10MC
제조업체:: onsemi

onsemi NTB Type N-Channel MOSFET & Diode, 60 A, 100 V Enhancement, 3-Pin TO-263 NTBS9D0N10MC

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩20,717.60

마지막 RS 재고

최종적인 1,510 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
10 - 190	₩2,071.76	₩20,717.60
200 - 390	₩2,021.00	₩20,210.00
400 +	₩1,990.92	₩19,909.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 205-2496
제조사 부품 번호:: NTBS9D0N10MC
제조업체:: onsemi

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	100V
	Series	NTB
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	9mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	68W
	Typical Gate Charge Qg @ Vgs	23nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Height	4.6mm
	Length	14.6mm
	Standards/Approvals	RoHS
	Width	9.6 mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 100V
	Series NTB
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 9mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 68W
	Typical Gate Charge Qg @ Vgs 23nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Height 4.6mm
	Length 14.6mm
	Standards/Approvals RoHS
	Width 9.6 mm
	Automotive Standard No

Datasheet - NTBS9D0N10MC

The ON Semiconductor single N-channel 100V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Continuous Drain Current rating is 60A

Drain to source on resistance rating is 9.0mohm

Low RDS(on) to minimize conduction losses

Optimized switching performance

Low QG and capacitance to minimize driver losses

Industry’s lowest Qrr and softest body-diode for superior low noise switching

Lowers switching noise/EMI

High efficiency with lower switching spike and EMI

Package type is D2PAK3

onsemi NTB Type N-Channel MOSFET & Diode, 60 A, 100 V Enhancement, 3-Pin TO-263 NTBS9D0N10MC

관련된 링크들