제조사부품번호

onsemi NTB01 Type N-Channel MOSFET, 75.4 A, 150 V Enhancement, 4-Pin TO-263

RS 제품 번호:: 230-9077
제조사 부품 번호:: NTB011N15MC
제조업체:: onsemi

onsemi NTB01 Type N-Channel MOSFET, 75.4 A, 150 V Enhancement, 4-Pin TO-263

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 reel of 800 units)*

₩3,247,136.00

재고있음

6,400 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
800 - 800	₩4,058.92	₩3,247,587.20
1600 - 7200	₩3,978.08	₩3,182,614.40
8000 +	₩3,899.12	₩3,118,995.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 230-9077
제조사 부품 번호:: NTB011N15MC
제조업체:: onsemi

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	75.4A
	Maximum Drain Source Voltage Vds	150V
	Series	NTB01
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	10.9mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	37nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	136.4W
	Maximum Operating Temperature	175°C
	Width	4.83 mm
	Length	10.67mm
	Height	15.88mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 75.4A
	Maximum Drain Source Voltage Vds 150V
	Series NTB01
	Package Type TO-263
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 10.9mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 37nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 136.4W
	Maximum Operating Temperature 175°C
	Width 4.83 mm
	Length 10.67mm
	Height 15.88mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - NTB011N15MC

The ON Semiconductor MOSFET - N-channel shielded gate power trench MOSFET which has drain to source voltage of 150 V.

Optimized Switching performance

Max RDS(on) = 10.9 mΩ at VGS = 10 V, ID = 75.4 A

Industry’s Lowest Qrr and softest Body-Diode for superior low noise switching

50% Lower Qrr than other MOSFET Suppliers

High efficiency with lower switching spike and EMI

Lowers Switching Noise/EMI

Improved switching FOM particularly Qgd

100% UIL Tested

No need or less snubber

onsemi NTB01 Type N-Channel MOSFET, 75.4 A, 150 V Enhancement, 4-Pin TO-263

관련된 링크들