onsemi NTB5D0N Type N-Channel MOSFET, 139 A, 150 V Enhancement, 3-Pin TO-263 NTB5D0N15MC
- RS 제품 번호:
- 221-6694
- 제조사 부품 번호:
- NTB5D0N15MC
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩37,030.50
재고있음
- 760 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 5 | ₩7,406.10 | ₩37,030.50 |
| 10 - 95 | ₩7,222.80 | ₩36,114.00 |
| 100 - 245 | ₩7,035.60 | ₩35,178.00 |
| 250 - 495 | ₩6,864.00 | ₩34,320.00 |
| 500 + | ₩6,688.50 | ₩33,442.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 221-6694
- 제조사 부품 번호:
- NTB5D0N15MC
- 제조업체:
- onsemi
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 139A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | NTB5D0N | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 75nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 10.67mm | |
| Height | 15.88mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 139A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series NTB5D0N | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 75nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 10.67mm | ||
Height 15.88mm | ||
Automotive Standard No | ||
The ON Semiconductor 150V of power MOSFET used 139 A of drain current used with single N−channel. It produced using an advanced power trench process that incorporates shielded gate technology. It has industry lowest Qrr and softest body-diode for superior low noise switching.
Max RDS(on) 5.0 m at VGS at 10V
50% lower Qrr than other MOSFET suppliers
Lowers switching noise/EMI
100% UIL tested
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