Vishay TrenchFET N-Channel MOSFET, 65 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SI7116BDN-T1-GE3

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Subtotal (3000 units, on reels of 3000)*

₩2,646,000.00

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3000 - 3000₩882.00₩2,646,600.00
6000 - 6000₩856.00₩2,567,400.00
9000 +₩830.00₩2,490,600.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
228-2824
제조사 부품 번호:
SI7116BDN-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

31.4nC

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

750μm

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.

Very low Qg and Qoss reduce power loss and

improve efficiency

Optimized Qg, Qgd, and Qgd/Qgs ratio reduces

switching related power loss

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