제조사부품번호

Infineon CoolMOS P7 Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252

RS 제품 번호:: 219-5992
제조사 부품 번호:: IPD80R600P7ATMA1
제조업체:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 reel of 2500 units)*

₩2,660,200.00

일시적 품절

2026년 5월 01일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
2500 - 10000	₩1,064.08	₩2,662,550.00
12500 +	₩1,043.40	₩2,609,440.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 219-5992
제조사 부품 번호:: IPD80R600P7ATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-252
	Series	CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	600mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	60W
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	20nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.73mm
	Width	6.22 mm
	Height	2.41mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-252
	Series CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 600mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 60W
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 20nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.73mm
	Width 6.22 mm
	Height 2.41mm
	Automotive Standard No

Datasheet - IPD80R600P7ATMA1

The Infineon 800V CoolMOS P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Easy to drive and to design-in

Better production yield by reducing ESD related failures

Less production issues and reduced field returns

Easy to select right parts for fine tuning of designs

Infineon CoolMOS P7 Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252

관련된 링크들