Infineon CoolMOS P7 N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin TO-252 IPD80R3K3P7ATMA1

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Subtotal (2500 units, on reels of 2500)*

₩1,325,000.00

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12500 +₩520.00₩1,299,000.00

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RS 제품 번호:
214-9050
제조사 부품 번호:
IPD80R3K3P7ATMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

800V

Series

CoolMOS P7

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.3Ω

Channel Mode

Enhancement

Forward Voltage Vf

900mV

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

18W

Typical Gate Charge Qg @ Vgs

5.8nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

2.41mm

Standards/Approvals

No

Width

6.22mm

Length

6.73mm

Automotive Standard

No

The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. These are easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs. These are recommended for hard and soft switching fly back topologies for LED Lighting, low power Chargers and Adapters, Audio, AUX power and Industrial power.

It comes with Fully optimized portfolio

Integrated Zener Diode ESD protection

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