제조사부품번호

Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 2.5 A, 800 V Enhancement, 3-Pin TO-252

RS 제품 번호:: 215-2515
제조사 부품 번호:: IPD80R2K4P7ATMA1
제조업체:: Infineon

Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 2.5 A, 800 V Enhancement, 3-Pin TO-252

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대량 구매 할인 기용 가능

Subtotal (1 reel of 2500 units)*

₩1,240,800.00

일시적 품절

2026년 5월 04일 부터 배송

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수량	한팩당	릴당*
2500 - 2500	₩496.32	₩1,239,390.00
5000 - 7500	₩485.04	₩1,214,480.00
10000 +	₩475.64	₩1,190,040.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-2515
제조사 부품 번호:: IPD80R2K4P7ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.5A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-252
	Series	800V CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.4Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	7.5nC
	Maximum Power Dissipation Pd	22W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.5A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-252
	Series 800V CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.4Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 7.5nC
	Maximum Power Dissipation Pd 22W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD80R2K4P7ATMA1

The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 2.5 A, 800 V Enhancement, 3-Pin TO-252

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