Infineon IRFS7 Type N-Channel MOSFET, 426 A, 40 V Enhancement, 3-Pin TO-263 IRFS7430TRLPBF
- RS 제품 번호:
- 218-3122
- 제조사 부품 번호:
- IRFS7430TRLPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩21,657.60
재고있음
- 3,835 개 단위 배송 준비 완료
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 195 | ₩4,331.52 | ₩21,657.60 |
| 200 - 395 | ₩4,222.48 | ₩21,112.40 |
| 400 + | ₩4,158.56 | ₩20,792.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 218-3122
- 제조사 부품 번호:
- IRFS7430TRLPBF
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 426A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | IRFS7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 460nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.65mm | |
| Length | 10.67mm | |
| Width | 4.83 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 426A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series IRFS7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 460nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 9.65mm | ||
Length 10.67mm | ||
Width 4.83 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon HEXFET series 40V Single N-Channel power MOSFET. It has D2PAK (TO-263) type package. It is suitable for applications where switching is less than 100 KHz.
Enhanced body diode dV/dt and dI/dt capability
Lead-free
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