Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-252 IPD60R280P7SAUMA1
- RS 제품 번호:
- 218-3051
- 제조사 부품 번호:
- IPD60R280P7SAUMA1
- 제조업체:
- Infineon
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Subtotal (1 pack of 15 units)*
₩22,193.40
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- 1,365 개 단위 배송 준비 완료
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 15 - 615 | ₩1,479.56 | ₩22,184.00 |
| 630 - 1230 | ₩1,441.96 | ₩21,620.00 |
| 1245 + | ₩1,419.40 | ₩21,300.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 218-3051
- 제조사 부품 번호:
- IPD60R280P7SAUMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS P7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 53W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22 mm | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS P7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 53W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Width 6.22 mm | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 series N-channel power MOSFET. It has extremely low switching and conduction losses which makes switching applications even more efficient, more compact and much cooler.
Significant reduction of switching and conduction losses
Suitable for hard and soft switching
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